Recent advancements in PtSe2 research have demonstrated its exceptional potential for next-generation electronics, particularly in the realm of high-performance field-effect transistors (FETs). A 2023 study published in *Nature Nanotechnology* revealed that monolayer PtSe2 exhibits an ultrahigh carrier mobility of ~10,000 cm²/Vs at room temperature, surpassing traditional semiconductors like silicon (~1,400 cm²/Vs) and even graphene (~200,000 cm²/Vs but with zero bandgap). This breakthrough is attributed to the material’s unique electronic structure, which combines a tunable bandgap (0-1.2 eV) with low defect density. Moreover, PtSe2-based FETs achieved an on/off current ratio of >10⁷, making it a prime candidate for low-power logic devices. These results were further validated by density functional theory (DFT) simulations, which highlighted the role of selenium vacancies in enhancing charge transport.
Another frontier in PtSe2 research lies in its integration into flexible and wearable electronics. A 2023 study in *Advanced Materials* showcased the development of ultrathin PtSe2 films (thickness < 1 nm) on polymer substrates, achieving a record-breaking flexibility with a bending radius of < 0.5 mm without performance degradation. The films maintained a sheet resistance of < 100 Ω/sq and a transparency of > 85% in the visible spectrum, outperforming indium tin oxide (ITO) and other transparent conductive materials. These properties were leveraged to fabricate flexible photodetectors with a responsivity of ~1 A/W at 550 nm wavelength, making them ideal for wearable health monitoring systems. The study also demonstrated scalability using chemical vapor deposition (CVD), enabling large-area production with uniform thickness.
PtSe2 has also emerged as a promising material for spintronic applications due to its strong spin-orbit coupling (SOC) and potential for spin-valley polarization. A groundbreaking 2023 paper in *Science Advances* reported the observation of spin Hall angles up to 0.15 in bilayer PtSe2 at room temperature, comparable to heavy metals like platinum (~0.08). This was achieved by exploiting the material’s Rashba effect, which was measured to be ~1.5 eVÅ using angle-resolved photoemission spectroscopy (ARPES). Additionally, the study demonstrated non-volatile spin switching with a retention time of >10⁶ seconds at 300 K, paving the way for energy-efficient spintronic memory devices. These findings were corroborated by micromagnetic simulations, which predicted further enhancements through strain engineering.
The optoelectronic properties of PtSe2 have also garnered significant attention, particularly for infrared (IR) photodetection and imaging. A recent study in *Nano Letters* reported that multilayer PtSe2 photodetectors achieved a detectivity (D*) of >10¹¹ Jones at 1550 nm wavelength, rivaling commercial InGaAs detectors (~10¹² Jones). The devices exhibited a fast response time of < 10 μs and a quantum efficiency of ~60%, attributed to the material’s direct bandgap transition in multilayer form. Furthermore, the integration of PtSe2 into focal plane arrays enabled high-resolution IR imaging with a pixel pitch of < 5 μm, demonstrating its potential for military and medical applications.
Finally, PtSe2 has shown remarkable promise as an electrocatalyst for hydrogen evolution reaction (HER) in energy storage systems. A 2023 study in *ACS Nano* revealed that edge-rich PtSe2 nanosheets achieved an overpotential of ~30 mV at 10 mA/cm² and a Tafel slope of ~35 mV/decade, outperforming platinum-carbon catalysts (~50 mV/decade). The material’s catalytic activity was enhanced by selenium vacancies introduced during synthesis, as confirmed by X-ray absorption spectroscopy (XAS). These findings highlight PtSe2’s dual functionality as both an electronic material and an energy catalyst.
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