The integration of 2D materials like graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride (h-BN) into semiconductor substrates has revolutionized device performance. Graphene exhibits electron mobility exceeding 200,000 cm²/Vs at room temperature, far surpassing silicon’s ~1,400 cm²/Vs. Recent studies have demonstrated MoS₂-based transistors with on/off ratios >10⁸ and subthreshold swings as low as 60 mV/decade, nearing the theoretical limit. These materials enable ultra-thin devices with thicknesses <1 nm, paving the way for sub-5 nm node technologies.
The scalability of 2D material synthesis remains a challenge, but chemical vapor deposition (CVD) techniques have achieved wafer-scale growth of monolayer MoS₂ with defect densities <10¹¹ cm⁻². Advances in van der Waals heterostructures allow precise stacking of dissimilar 2D layers, creating tailored bandgaps ranging from 0 eV (graphene) to ~2 eV (MoS₂). Such heterostructures have enabled novel optoelectronic devices with external quantum efficiencies >90%.
Thermal management in 2D material-based devices is critical due to their low thermal conductivity (~30-50 W/mK for MoS₂). Researchers have developed hybrid structures incorporating h-BN layers, which exhibit thermal conductivities up to 600 W/mK, to mitigate heat dissipation issues. These innovations have led to power densities exceeding 10⁵ W/cm² in high-frequency applications.
Recent breakthroughs include the demonstration of room-temperature quantum Hall effect in twisted bilayer graphene at magic angles (~1.1°), opening avenues for topological quantum computing. Additionally, TMD-based memristors have shown switching speeds <10 ns and endurance >10¹⁰ cycles, making them promising candidates for neuromorphic computing architectures.
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