II-VI quantum dots (QDs), such as CdSe and ZnS, are revolutionizing optoelectronics due to their tunable bandgaps and high quantum yields. Recent studies have demonstrated QDs with external quantum efficiencies (EQE) exceeding 95% in light-emitting diodes (LEDs), a significant leap from the 70-80% range observed a decade ago. These QDs exhibit size-dependent emission wavelengths ranging from 400 nm to 700 nm, enabling precise color tuning for displays and lighting.
Advancements in core-shell architectures, such as CdSe/ZnS QDs, have enhanced photostability by reducing non-radiative recombination rates by up to 90%. This is achieved through passivation of surface defects, which typically account for ~30% of energy loss in bare QDs. Such improvements have extended the operational lifetime of QD-based devices to over 50,000 hours under continuous illumination.
The integration of II-VI QDs into perovskite solar cells has boosted power conversion efficiencies (PCE) from ~20% to over 25%. This is attributed to their ability to harvest near-infrared (NIR) photons, increasing photon absorption by ~15%. Additionally, QD-based tandem solar cells have demonstrated PCEs exceeding 30%, making them competitive with silicon-based technologies.
Recent breakthroughs in colloidal synthesis have enabled the production of QDs with sub-2 nm size dispersity (<5%), ensuring uniform optical properties across large-scale device arrays. This precision has facilitated the development of ultra-high-definition (UHD) displays with color gamuts covering >99% of the Rec. 2020 standard.
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