Topological Insulators Based on II-VI Compounds

II-VI materials like HgTe have emerged as leading candidates for topological insulators (TIs) due to their inverted band structures and high carrier mobilities (>50,000 cm²/Vs). Recent experiments on HgTe/CdTe quantum wells have demonstrated quantized edge conductance of e²/h at temperatures up to 10 K, a significant improvement over previous results at cryogenic temperatures (<1 K). These properties make them ideal for spintronic applications where spin-polarized currents are essential.

The discovery of Weyl semimetal behavior in doped II-VI compounds such as Cd3As2 has expanded the scope of TIs. These materials exhibit Fermi arcs on their surfaces and ultrahigh magnetoresistance (>10⁶%) under magnetic fields of 9 T. Such characteristics enable novel quantum computing architectures by facilitating Majorana fermion states at material interfaces.

Recent theoretical predictions suggest that alloying II-VI compounds with transition metals (e.g., Mn-doped ZnTe) can induce magnetic topological phases with Chern numbers up to ±3. Experimental validation has shown anomalous Hall conductivities of ~1e²/h at room temperature, paving the way for energy-efficient spintronic devices with minimal Joule heating losses (<1 mW/cm²).

Integration of II-VI TIs with superconducting materials like NbSe2 has demonstrated proximity-induced superconductivity with critical temperatures up to 3 K. This hybrid system is being explored for fault-tolerant quantum computing platforms using topological qubits.

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