In-Situ TEM for Real-Time Device Degradation Studies

In-situ transmission electron microscopy (TEM) has become an indispensable tool for studying device degradation mechanisms at atomic resolution. Recent developments in environmental TEM allow imaging under realistic operating conditions, such as temperatures up to 1000°C and gas pressures up to 20 mbar. This has enabled the observation of oxidation processes in silicon nanowires with lattice resolution better than 0.1 nm, revealing the formation kinetics of SiO2 layers at rates as low as 0.01 nm/s under O2 exposure at elevated temperatures.

The integration of electrical biasing capabilities into TEM holders has facilitated real-time studies of electromigration phenomena at nanoscale interconnects.. For example , researchers observed void formation along copper interconnects under current densities exceeding ~10^7 A/cm^2 , leading catastrophic failures within minutes . Such insights inform design rules aimed at extending interconnect lifetimes beyond ~10 years under typical operating conditions .

In-situ TEM combined with advanced detectors enables elemental mapping during degradation processes . Energy-dispersive X-ray spectroscopy (EDX) systems achieve sensitivities down ~100 ppm , allowing identification trace impurities responsible accelerated degradation . For instance , sodium contamination levels below ~50 ppm were linked increased leakage currents gate oxides CMOS devices .

Recent advances liquid-cell TEM permit observation electrochemical reactions real time . Studies lithium-ion battery materials revealed dendrite growth rates ~100 nm/s during charging cycles leading short circuits after just few cycles . These findings guide development safer battery chemistries higher energy densities above ~500 Wh/kg.

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