The integration of Ti3C2Tx MXene with Cs2AgBiBr6 perovskite has emerged as a groundbreaking approach to enhance optoelectronic performance, particularly in photodetection and solar energy conversion. Recent studies reveal that the Ti3C2Tx/Cs2AgBiBr6 composite exhibits a remarkable photoresponsivity of 12.5 A/W at 450 nm, surpassing standalone Cs2AgBiBr6 by over 300%. This enhancement is attributed to the superior electrical conductivity of Ti3C2Tx (≈10,000 S/cm) and its ability to facilitate efficient charge carrier separation, reducing recombination losses. Additionally, the composite demonstrates an external quantum efficiency (EQE) of 92% at 500 nm, a significant improvement compared to the 65% EQE of pristine Cs2AgBiBr6. These results underscore the potential of MXene-perovskite hybrids in high-performance optoelectronic devices.
The structural and interfacial properties of Ti3C2Tx/Cs2AgBiBr6 composites play a pivotal role in their optoelectronic functionality. Advanced characterization techniques, such as high-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS), reveal a well-defined heterojunction with minimal lattice mismatch (<1.5%), ensuring efficient charge transfer across the interface. Density functional theory (DFT) calculations further confirm that the work function difference between Ti3C2Tx (4.1 eV) and Cs2AgBiBr6 (4.8 eV) creates an internal electric field, enhancing charge separation efficiency by 45%. Moreover, the composite exhibits a reduced trap density of 1.2 × 10^15 cm^-3, compared to 3.8 × 10^15 cm^-3 for pure Cs2AgBiBr6, leading to improved device stability under continuous illumination.
The tunable optical properties of Ti3C2Tx/Cs2AgBiBr6 composites make them highly versatile for broadband optoelectronic applications. Spectroscopic analysis shows that the composite achieves a broad absorption range from 300 nm to 800 nm, with an absorption coefficient exceeding 10^5 cm^-1 in the visible spectrum. This is attributed to the synergistic effect of Ti3C2Tx's plasmonic behavior and Cs2AgBiBr6's direct bandgap (≈1.95 eV). Furthermore, time-resolved photoluminescence (TRPL) measurements reveal a prolonged carrier lifetime of 18 ns in the composite, compared to 8 ns in pristine Cs2AgBiBr6, indicating suppressed non-radiative recombination pathways.
Scalability and environmental stability are critical factors for the practical deployment of Ti3C2Tx/Cs2AgBiBr6 composites in optoelectronics. Recent advancements in solution-processable synthesis techniques have enabled large-area fabrication with uniform film morphology, achieving a root-mean-square (RMS) roughness of <5 nm over centimeter-scale areas. Environmental stability tests demonstrate that encapsulated devices retain >90% of their initial performance after 1000 hours under ambient conditions (25°C, 60% RH), compared to <50% for unencapsulated Cs2AgBiBr6 devices. This enhanced stability is attributed to the hydrophobic nature of Ti3C2Tx and its ability to mitigate moisture-induced degradation.
The application potential of Ti3C2Tx/Cs2AgBiBr6 composites extends beyond photodetectors and solar cells to emerging fields such as flexible electronics and light-emitting diodes (LEDs). Flexible devices fabricated on polyethylene terephthalate (PET) substrates exhibit a bending stability of >95% after 1000 cycles at a curvature radius of 5 mm, owing to the mechanical robustness of Ti3C2Tx. In LED applications, the composite achieves a luminance efficiency of 12 cd/A at low driving voltages (<5 V), making it competitive with state-of-the-art materials like organic-inorganic hybrid perovskites.
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