Quantum dot (QD) lasers based on III-V materials, such as InAs/GaAs, have achieved unprecedented performance metrics, including threshold current densities as low as 10 A/cm² at room temperature. These devices leverage the zero-dimensional density of states in QDs, enabling superior carrier confinement and reduced Auger recombination. Recent advancements in epitaxial growth techniques, such as molecular beam epitaxy (MBE), have allowed for precise control over QD size and uniformity, achieving size variations of less than 5%. This precision has led to lasing wavelengths tunable from 1.2 to 1.6 µm, making these lasers ideal for telecommunications and integrated photonics.
The integration of QD lasers with silicon photonics has emerged as a groundbreaking development. By bonding InAs/GaAs QD lasers onto silicon substrates, researchers have demonstrated direct modulation speeds exceeding 25 Gbps with energy efficiencies below 100 fJ/bit. This integration addresses the critical challenge of combining III-V materials with CMOS-compatible platforms, paving the way for on-chip optical interconnects. Additionally, the thermal stability of QD lasers has been significantly improved, with operating temperatures exceeding 120°C without degradation in performance.
Recent studies have explored the use of QD lasers in quantum communication systems. The narrow linewidth (<100 kHz) and high coherence of these lasers make them suitable for generating entangled photon pairs via spontaneous parametric down-conversion (SPDC). Experimental setups have achieved entanglement fidelities greater than 95%, highlighting their potential in quantum key distribution (QKD) networks. Furthermore, the ability to operate at cryogenic temperatures (below 10 K) opens new avenues for quantum computing applications where low-noise light sources are essential.
The scalability of QD laser fabrication has been enhanced through innovative approaches such as droplet epitaxy and strain engineering. These methods enable the production of high-density QD arrays (>10¹⁰ cm⁻²) with minimal defects, ensuring high yield and reproducibility. Additionally, the incorporation of p-doped QDs has led to improved gain characteristics, with differential gains exceeding 10⁻¹⁴ cm² per dot. These advancements position QD lasers as a cornerstone technology for next-generation optoelectronic systems.
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