High-entropy thin films (HEFs) have emerged as a transformative material class for next-generation electronic devices, offering unprecedented tunability in electronic, thermal, and mechanical properties. Recent studies have demonstrated that HEFs with five or more principal elements exhibit exceptional electrical conductivity (>10^6 S/m) and thermal stability up to 1000°C, outperforming traditional binary and ternary compounds. For instance, a (CrMnFeCoNi)N HEF exhibited a hardness of 25 GPa and a resistivity of 15 μΩ·cm, making it ideal for high-power electronics. The configurational entropy (ΔSconf > 1.5R) stabilizes these materials against phase separation, enabling robust performance under extreme conditions.
The integration of HEFs into semiconductor devices has shown remarkable improvements in carrier mobility and device efficiency. A recent breakthrough involved a (HfZrTiTaNb)O2 high-entropy oxide thin film used as a gate dielectric in MOSFETs, achieving a dielectric constant (κ) of 45 and leakage current density <10^-8 A/cm^2 at 1 MV/cm. These properties surpass those of conventional SiO2 (κ = 3.9) and HfO2 (κ = 25), enabling scaling to sub-3 nm nodes. Additionally, the high entropy-induced defect tolerance reduces interface trap densities to <10^10 cm^-2·eV^-1, enhancing device reliability and lifetime.
HEFs are also revolutionizing energy storage and conversion technologies. A (CoCrFeMnNi)S2 high-entropy sulfide thin film demonstrated a specific capacitance of 1200 F/g at 1 A/g in supercapacitors, with 95% retention after 10,000 cycles. Similarly, a (LaPrNdSmEu)CoO3 perovskite HEF achieved an oxygen evolution reaction (OER) overpotential of 280 mV at 10 mA/cm^2, outperforming state-of-the-art IrO2 catalysts. These advancements are attributed to the synergistic effects of multiple active sites and enhanced surface reactivity enabled by high entropy.
The mechanical robustness of HEFs makes them ideal candidates for flexible electronics. A (TiZrHfNbTa)C high-entropy carbide thin film exhibited a Young’s modulus of 450 GPa and fracture toughness of 6 MPa·m^1/2 while maintaining flexibility under bending radii <5 mm. Such properties enable the development of wearable devices with enhanced durability. Furthermore, the thermal expansion coefficient can be precisely tuned to match substrates like Si or GaN, reducing stress-induced failures in heterostructures.
Finally, the scalability of HEF synthesis via techniques such as magnetron sputtering and atomic layer deposition has been demonstrated on industrial scales. Recent work achieved uniform deposition rates of 5 nm/min over 300 mm wafers with compositional variations <1%. This scalability, combined with their multifunctional properties, positions HEFs as a cornerstone material for advancing electronic devices across industries.
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