Quantum Dots from Graphene for Next-Generation Optoelectronics

Graphene quantum dots (GQDs) have emerged as a revolutionary material for optoelectronic applications due to their tunable bandgap and exceptional photoluminescence properties. Recent studies have demonstrated GQDs with quantum yields exceeding 80%, making them highly efficient for light-emitting diodes (LEDs) and solar cells. For instance, GQDs synthesized via hydrothermal methods exhibit emission wavelengths ranging from 450 nm to 750 nm, enabling full-spectrum light manipulation.

The integration of GQDs into perovskite solar cells has achieved power conversion efficiencies (PCEs) of over 25%, rivaling traditional silicon-based technologies. This is attributed to the enhanced charge carrier mobility (>1000 cm²/Vs) and reduced recombination rates in GQD-perovskite interfaces. Moreover, GQDs' ability to act as electron transport layers (ETLs) has been shown to improve device stability under continuous illumination for over 1000 hours.

Advancements in doping strategies have further expanded the functionality of GQDs. Nitrogen-doped GQDs (N-GQDs) exhibit enhanced catalytic activity for oxygen reduction reactions (ORR), with onset potentials of 0.92 V vs. RHE, outperforming commercial Pt/C catalysts. This opens avenues for their use in fuel cells and metal-air batteries, where energy densities exceeding 500 Wh/kg have been reported.

The scalability of GQD production remains a challenge, but recent breakthroughs in microwave-assisted synthesis have reduced production times from hours to minutes while maintaining high quality. This method has achieved yields of up to 95% with minimal defects (<1%), paving the way for industrial-scale applications in flexible electronics and bioimaging.

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