Atomic Layer Deposition (ALD) for Ultra-Thin Anode Precursor Coatings

Atomic Layer Deposition (ALD) has revolutionized the fabrication of ultra-thin anode precursor coatings with precise thickness control down to the atomic level. For example, ALD-deposited Al2O3 layers as thin as 1 nm have been shown to enhance the cycle life of silicon anodes by preventing electrolyte decomposition and SEI layer growth. This has led to capacity retention improvements of over 80% after 1000 cycles.

ALD enables conformal coating on complex nanostructures such as silicon nanowires and graphene composites. Recent studies have demonstrated that ALD-coated Si nanowires exhibit volumetric capacities exceeding 2000 mAh/cm^3 while maintaining mechanical integrity during lithiation/delithiation processes. This is attributed to the uniform stress distribution provided by the ALD coating.

The ability to deposit multiple materials sequentially via ALD has opened new avenues for hybrid anode precursors. For instance, alternating layers of TiO2 and LiPON have been shown to create artificial SEI layers with ionic conductivities above 10^-6 S/cm and electronic resistances exceeding 10^8 Ω·cm, effectively suppressing dendrite growth in lithium metal anodes.

ALD also offers unparalleled control over interfacial engineering between anode materials and solid electrolytes in all-solid-state batteries (ASSBs). By depositing ultrathin LiNbO3 layers (~2 nm), researchers have achieved interfacial resistances as low as 10 Ω·cm^2 at room temperature, enabling efficient ion transport across interfaces without compromising mechanical stability.

Despite its advantages, ALD faces challenges in scalability and cost-effectiveness for large-scale battery production.

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