Two-dimensional transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, exhibit unique quantum properties due to their atomic thickness and direct bandgaps (~1-2 eV). Recent studies have demonstrated room-temperature exciton binding energies exceeding 500 meV in monolayer MoS2 , enabling strong light-matter interactions for optoelectronic applications . These materials also show valley polarization lifetimes up to 10 ns , crucial for valleytronics .
Defect engineering in TMDCs has enabled precise control over electronic properties . For instance , sulfur vacancies in MoS2 can be passivated using organic molecules , increasing carrier mobility from 30 cm^2/V·s to 200 cm^2/V·s . Additionally , doping with Nb atoms introduces p-type conductivity in WSe2 with hole densities reaching 10^13 cm^-2 , essential for complementary logic circuits .
Heterostructures of TMDCs with other two-dimensional materials like graphene or h-BN have unlocked novel functionalities . For example , MoS2/graphene vertical heterojunctions exhibit photoresponsivities exceeding 10^4 A/W due to efficient charge transfer across the interface . Moreover , encapsulation with h-BN layers reduces charge scattering , enhancing field-effect transistor performance with on/off ratios above 10^8 .
Scalable synthesis techniques such as chemical vapor deposition (CVD) are advancing TMDC production for industrial applications . CVD-grown MoS2 films achieve uniform coverage on 4 -inch wafers with defect densities below 10^11 cm^-2 . These advancements pave the way for integrating TMDCs into next-generation quantum devices and flexible electronics .
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