The monolithic integration of III-V materials on silicon substrates has achieved significant progress, with defect densities reduced to below 10⁷ cm⁻² through advanced buffer layer engineering techniques such as aspect ratio trapping (ART). This approach enables the growth of high-quality InP layers on Si with threading dislocation densities (TDDs) as low as mid-10⁶ cm⁻². Such advancements are critical for realizing cost-effective and scalable optoelectronic devices compatible with CMOS technology.
Recent studies have demonstrated room-temperature lasing from InGaAs quantum wells monolithically grown on Si substrates, achieving threshold currents as low as 20 mA and output powers exceeding 50 mW. The use of GaP nucleation layers has minimized lattice mismatch-induced defects by over 90%, enabling long device lifetimes exceeding 10⁴ hours under continuous operation. These developments are driving the adoption of III-V/Si platforms for next-generation photonic integrated circuits (PICs).
The integration of III-V materials with silicon waveguides has enabled efficient light coupling with insertion losses below -3 dB per facet. By employing adiabatic tapering techniques, researchers have achieved mode conversion efficiencies exceeding -0.5 dB across a broad wavelength range from 1.3 to 1.55 µm. This progress is essential for enabling high-performance transceivers in data center applications requiring terabit-scale bandwidths.
Furthermore, the monolithic integration of III-V transistors on Si substrates has yielded heterojunction bipolar transistors (HBTs) with cutoff frequencies (fT) exceeding -500 GHz and maximum oscillation frequencies (fmax) over -700 GHz.
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