Ultrafast terahertz (THz) spectroscopy has emerged as a powerful tool for studying carrier dynamics in perovskite semiconductors with femtosecond resolution. Recent experiments have revealed carrier mobility values exceeding 100 cm²/Vs in hybrid perovskites like MAPbI3, measured at THz frequencies between 0.1-3THz. This technique provides insights into charge recombination mechanisms that occur on timescales as short as 10^-15 seconds.
The application of THz spectroscopy has uncovered anomalous carrier cooling rates in perovskites, where hot carriers retain energy for up to 500ps due to phonon bottleneck effects. This phenomenon is critical for designing high-efficiency solar cells, as it suggests potential efficiencies beyond the Shockley-Queisser limit (33%). Experimental data show that hot carrier extraction could boost efficiencies by up to 20%.
Moreover, THz spectroscopy has been used to map defect densities in perovskite films with spatial resolutions down to 10µm. Studies have identified trap densities as low as 10^15 cm^-3 in state-of-the-art materials, correlating directly with improved device performance and stability under operational conditions exceeding 1000 hours.
Recent advancements include the integration of THz spectroscopy with cryogenic setups operating at temperatures below -150°C. These setups have revealed phase transitions in perovskites at THz frequencies, providing new insights into material stability and degradation mechanisms under extreme conditions.
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