CdMnTe-based dilute magnetic semiconductors show Curie temperatures above room temperature (~350 K), enabling spintronic device operation without external cooling requirements—a significant advantage over traditional ferromagnetic materials whose Curie points typically lie below ambient conditions limiting practical utility widespread adoption scenarios.
Spin injection efficiencies exceeding ~90% were achieved utilizing Schottky barrier contacts formed between metal electrodes & p-type doped layers ensuring minimal interfacial resistance values less than ~10^-8 Ω·cm^2 thereby facilitating efficient transport polarized carriers across heterojunctions without significant depolarization losses occurring during transit periods shorter than picosecond timescales.
Recent developments focus on integrating these materials into spin-orbit torque (SOT)-based memory cells demonstrating switching energies lower than ~100 fJ/bit—orders magnitude reduction compared conventional STT-MRAM designs—while maintaining thermal stabilities factor greater ten years even elevated temperatures upwards degrees Celsius ensuring reliable long-term data retention capabilities required modern computing architectures demanding ever-increasing storage densities performance benchmarks simultaneously met stringent power consumption constraints imposed mobile IoT edge devices alike.
Future directions explore utilizing spin Hall effect phenomena observed within heavy metal/II VI compound bilayers generate pure spin currents densities reaching amperes per square centimeter levels under applied electric fields modest strengths merely volts per micrometer thus paving way ultra-low-power logic circuits capable performing complex computations dissipating minimal amounts heat crucial advancing beyond von Neumann paradigm towards neuromorphic brain-inspired computing systems leveraging inherent parallelism offered spintronics-based approaches.
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