III-V nanowires (NWs), particularly those based on InP and GaAs, have emerged as a promising platform for high-efficiency solar cells due to their superior light absorption and carrier collection properties. Recent studies have demonstrated single-junction NW solar cells with efficiencies exceeding 20%, rivaling traditional thin-film technologies. The radial junction architecture in NWs allows for efficient carrier extraction even in materials with short diffusion lengths.
The use of tandem NW solar cells has further pushed efficiency limits, with InP/GaAs NW structures achieving efficiencies above 30% under AM1.5G illumination. This is enabled by the precise bandgap engineering achievable through alloying techniques such as MOCVD, which allows for lattice-mismatched growth without dislocations. Such tandem configurations are particularly promising for space applications due to their radiation hardness and lightweight nature.
Recent advancements in NW growth techniques have enabled the fabrication of flexible solar cells on unconventional substrates such as graphene and polymers. These devices exhibit efficiencies above 15% while maintaining mechanical flexibility and robustness under bending radii below 5 mm. This opens up new possibilities for wearable electronics and portable power systems.
The scalability of NW solar cells has been addressed through the development of roll-to-roll fabrication processes, which can produce large-area devices at a cost comparable to silicon-based technologies. Pilot-scale production lines have demonstrated throughputs exceeding 1 m²/min while maintaining device efficiencies above 18%.
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