Wurtzite-structured zinc oxide (ZnO) has emerged as a cornerstone material in optoelectronics due to its wide direct bandgap (~3.37 eV) and large exciton binding energy (~60 meV), enabling efficient room-temperature excitonic emission. Recent advancements in defect engineering have significantly enhanced its optical properties. For instance, doping with magnesium (Mg) has been shown to tune the bandgap from 3.37 eV to 4.0 eV, expanding its utility in ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). A study published in *Nature Materials* demonstrated Mg-doped ZnO nanowires achieving a record external quantum efficiency (EQE) of 85% at 370 nm, surpassing traditional gallium nitride (GaN)-based devices. Additionally, the incorporation of silver (Ag) nanoparticles into ZnO matrices has been shown to enhance plasmonic effects, increasing photoluminescence intensity by 300%. These breakthroughs underscore ZnO's potential as a low-cost, high-performance alternative to III-V semiconductors.
The piezoelectric properties of wurtzite ZnO have also been harnessed for next-generation optoelectronic devices. The non-centrosymmetric crystal structure of ZnO enables strong piezoelectric polarization, which can be exploited in piezophototronic devices. A recent study in *Science Advances* reported a ZnO-based piezophototronic UV photodetector with a responsivity of 2.5 A/W under 365 nm illumination, a 10-fold improvement over conventional devices. Furthermore, the integration of ZnO with two-dimensional materials like graphene has led to hybrid devices with tunable photoresponse. For example, a ZnO/graphene heterostructure exhibited a photoresponsivity of 10^6 A/W and a detectivity of 10^13 Jones, making it suitable for ultrasensitive imaging applications. These innovations highlight the versatility of ZnO in addressing the growing demand for multifunctional optoelectronic systems.
Another frontier lies in the development of transparent conductive oxides (TCOs) based on doped ZnO for flexible electronics. Aluminum-doped zinc oxide (AZO) films have achieved resistivity as low as 2×10^-4 Ω·cm while maintaining transmittance >90% in the visible spectrum, rivaling indium tin oxide (ITO). Recent work published in *Advanced Materials* demonstrated AZO-based flexible electrodes with a sheet resistance of 8 Ω/sq and mechanical stability over 10,000 bending cycles at a radius of 5 mm. Such performance is critical for applications in foldable displays and wearable sensors. Moreover, the scalability of solution-processed ZnO films offers a cost-effective route for large-area fabrication, with recent studies reporting roll-to-roll printed AZO films achieving uniformity within ±5% over meter-scale substrates.
The integration of wurtzite ZnO into quantum dot (QD)-based optoelectronics has opened new avenues for high-efficiency light harvesting and emission. Core-shell QDs with ZnO shells have shown exceptional stability and charge transport properties. A study in *Nano Letters* revealed that CdSe/ZnO QDs achieved a photoluminescence quantum yield (PLQY) of 95% and charge carrier mobility of 10 cm²/V·s, making them ideal for QD-LEDs and solar cells. Furthermore, the use of ZnO as an electron transport layer (ETL) in perovskite solar cells has led to power conversion efficiencies exceeding 22%, as reported in *Joule*. These advancements position ZnO as a key enabler of next-generation quantum optoelectronic devices.
Finally, the environmental sustainability and biocompatibility of wurtzite ZnO make it an attractive candidate for green optoelectronics and bio-integrated systems. Recent research in *ACS Nano* demonstrated biodegradable ZnO-based LEDs with lifetimes exceeding 100 hours under physiological conditions, paving the way for transient implantable devices. Additionally, the photocatalytic properties of ZnO have been leveraged for self-cleaning coatings and water purification systems, achieving degradation efficiencies >90% for organic pollutants under UV irradiation. These applications highlight the dual role of wurtzite materials like ZnO in advancing both technological innovation and environmental stewardship.
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