Description

Description

Diiodosilane (H₂I₂Si) is a highly reactive inorganic compound primarily used in semiconductor and advanced materials research. This volatile silicon halide features two iodine atoms bonded to a central silicon atom, making it a valuable precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. With a CAS number of 13760-02-6, our high-purity Diiodosilane is rigorously tested to ensure minimal impurities, making it ideal for thin-film fabrication, nanotechnology applications, and silicon-based material synthesis. Packaged under inert gas to preserve stability, this compound is handled exclusively in controlled environments to maintain its integrity. Suitable for researchers and industrial scientists working on cutting-edge electronic and optoelectronic devices.

Application

Diiodosilane is widely employed in the deposition of silicon-containing thin films for semiconductor devices, including transistors and photovoltaic cells. Its high reactivity makes it a preferred choice for low-temperature CVD processes, enabling precise control over film stoichiometry. Researchers also utilize it in the synthesis of silicon-based nanomaterials and as a doping agent in advanced electronics.

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