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Atomfair Tungsten hexafluoride WF6 F6W

Description Tungsten Hexafluoride (WF6) is a highly reactive inorganic compound composed of tungsten and six fluorine atoms. This colorless to pale yellow gas is widely utilized in semiconductor and electronics manufacturing due to its excellent chemical vapor deposition (CVD) properties. With a CAS number of 7783-82-6 and molecular formula F6W , it is a critical precursor for depositing tungsten thin films in integrated circuits and microelectromechanical systems (MEMS). Tungsten hexafluoride is stored under high-pressure cylinders and requires careful handling due to its corrosive and toxic nature. Its high purity grade (>99.9%) ensures optimal performance in advanced material synthesis and nanofabrication…

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Description

Description

Tungsten Hexafluoride (WF6) is a highly reactive inorganic compound composed of tungsten and six fluorine atoms. This colorless to pale yellow gas is widely utilized in semiconductor and electronics manufacturing due to its excellent chemical vapor deposition (CVD) properties. With a CAS number of 7783-82-6 and molecular formula F6W, it is a critical precursor for depositing tungsten thin films in integrated circuits and microelectromechanical systems (MEMS). Tungsten hexafluoride is stored under high-pressure cylinders and requires careful handling due to its corrosive and toxic nature. Its high purity grade (>99.9%) ensures optimal performance in advanced material synthesis and nanofabrication processes.

  • CAS No: 7783-82-6
  • Molecular Formula: F6W
  • Molecular Weight: 297.83
  • Exact Mass: 297.941352
  • Monoisotopic Mass: 297.941352
  • IUPAC Name: hexafluorotungsten
  • SMILES: F[W](F)(F)(F)(F)F
  • Synonyms: Tungsten hexafluoride, Hexafluorotungsten, 7783-82-6, Tungsten fluoride, Tungsten fluoride (WF6), (OC-6-11)-

Application

Tungsten hexafluoride is primarily used in the semiconductor industry for tungsten metallization via chemical vapor deposition (CVD). It enables the production of low-resistance interconnects and contacts in integrated circuits. Additionally, WF6 is employed in the fabrication of diffusion barriers and gate electrodes in advanced microelectronics. Its reactivity with hydrogen or silane makes it ideal for precise thin-film deposition processes. Research applications include catalysis and materials science studies.

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