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Atomfair Zirconium, tetrakis(dimethylamino)- C8H24N4Zr
Description Zirconium, tetrakis(dimethylamino)- (CAS No. 19756-04-8) is a highly specialized organometallic compound with the molecular formula C8H24N4Zr. This advanced chemical reagent is classified as a zirconium(4+) dimethylazanide complex, widely recognized for its role in materials science and thin-film deposition processes. With a purity grade tailored for research and industrial applications, this compound serves as a critical precursor in atomic layer deposition (ALD) and chemical vapor deposition (CVD) techniques. Its exceptional thermal stability and reactivity make it ideal for synthesizing high-performance zirconium-containing thin films, coatings, and nanomaterials. Packaged under inert gas to ensure stability, this product is rigorously tested for consistency…
Description
Description
Zirconium, tetrakis(dimethylamino)- (CAS No. 19756-04-8) is a highly specialized organometallic compound with the molecular formula C8H24N4Zr. This advanced chemical reagent is classified as a zirconium(4+) dimethylazanide complex, widely recognized for its role in materials science and thin-film deposition processes. With a purity grade tailored for research and industrial applications, this compound serves as a critical precursor in atomic layer deposition (ALD) and chemical vapor deposition (CVD) techniques. Its exceptional thermal stability and reactivity make it ideal for synthesizing high-performance zirconium-containing thin films, coatings, and nanomaterials. Packaged under inert gas to ensure stability, this product is rigorously tested for consistency and performance.
- CAS No: 19756-04-8
- Molecular Formula: C8H24N4Zr
- Molecular Weight: 267.53
- Exact Mass: 266.104796
- Monoisotopic Mass: 266.104796
- IUPAC Name: dimethylazanide;zirconium(4+)
- SMILES: C[N-]C.C[N-]C.C[N-]C.C[N-]C.[Zr+4]
- Synonyms: 19756-04-8, Zirconium, tetrakis(dimethylamino)-, Tetrakis(dimethylamido)zirconium(IV), DTXSID90173439, DTXCID8095930
Application
Zirconium, tetrakis(dimethylamino)- is primarily used as a precursor for depositing zirconium oxide (ZrO2) thin films in semiconductor and optoelectronic applications. Its high volatility and clean decomposition properties make it suitable for ALD and CVD processes in microelectronics manufacturing. Researchers also utilize this compound to develop advanced ceramic materials and catalysts due to its well-defined coordination chemistry.
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