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Atomfair Triethylgallium TEGa C6H15Ga

Description Triethylgallium (TEGa) is a highly reactive organogallium compound with the molecular formula C6H15Ga and CAS number 1115-99-7 . This pyrophoric liquid is widely utilized in the semiconductor and electronics industries as a precursor for gallium-containing thin films in metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) processes. With a purity grade suitable for high-performance applications, our Triethylgallium is rigorously tested to ensure minimal impurities, making it ideal for the production of optoelectronic devices such as LEDs, laser diodes, and high-efficiency solar cells. Proper handling under inert atmospheres (e.g., nitrogen or argon) is essential due to its air-…

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Description

Description

Triethylgallium (TEGa) is a highly reactive organogallium compound with the molecular formula C6H15Ga and CAS number 1115-99-7. This pyrophoric liquid is widely utilized in the semiconductor and electronics industries as a precursor for gallium-containing thin films in metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) processes. With a purity grade suitable for high-performance applications, our Triethylgallium is rigorously tested to ensure minimal impurities, making it ideal for the production of optoelectronic devices such as LEDs, laser diodes, and high-efficiency solar cells. Proper handling under inert atmospheres (e.g., nitrogen or argon) is essential due to its air- and moisture-sensitive nature. Available in secure, leak-proof containers to guarantee stability and safety during transport and storage.

  • CAS No: 1115-99-7
  • Molecular Formula: C6H15Ga
  • Molecular Weight: 156.91
  • Exact Mass: 156.04295
  • Monoisotopic Mass: 156.04295
  • IUPAC Name: triethylgallane
  • SMILES: CC[Ga](CC)CC
  • Synonyms: Triethylgallium, Gallium, triethyl-, EINECS 214-232-7, DTXSID1061497, Gallium, triethyl

Application

Triethylgallium is primarily used as a gallium source in the epitaxial growth of III-V semiconductor materials, including gallium arsenide (GaAs) and gallium nitride (GaN). It enables precise control of layer composition and doping in MOCVD systems, critical for advanced optoelectronic and microelectronic devices. Applications extend to photovoltaic cells, RF amplifiers, and high-frequency transistors, where high-purity gallium integration is essential.

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